IRGP4055DPBF PDP TRENCH IGBT

IRGP4055DPBF PDP TRENCH IGBT

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high rep.

Features

l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRGP4055DPbF Key Parameters 300 1.70 270 150 V V A °C VCE min VCE(ON) typ. @ 110A IRP max @ TC= 25°C c TJ max C C G E C G E n-channel G Gate C Collector TO-247AC E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and l.