www.DataSheet4U.com HVD359 Variable Capacitance Diode for VCXO ADE-208-955 (Z) Rev. 0 Jul. 2000 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HVD359 Lase.
• High capacitance ratio and good C-V linearity.
• To be usable at low voltage.
• Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HVD359 Laser Mark G Package Code SFP
Outline
Cathode mark Mark 1
G
2 1. Cathode 2. Anode
HVD359
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 −55 to +125 Unit V °C °C
Electrical Characteristics
(Ta = 25°C)
Item Reverse current Symbol IR1 IR2 Capacitance C1 C4 Capacitance ratio Series resistance ESD-Capability *
1
Min 24.8 .
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No. | Part # | Manufacture | Description | Datasheet |
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Renesas Technology |
Variable Capacitance Diode |
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Renesas |
Variable Capacitance Diode |
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Hitachi Semiconductor |
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Renesas Technology |
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Renesas |
Variable Capacitance Diode |
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Renesas Technology |
Variable Capacitance Diode |
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Hitachi Semiconductor |
Variable Capacitance Diode |
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Renesas Technology |
Variable Capacitance Diode |
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Renesas Technology |
Variable Capacitance Diode |
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Hitachi Semiconductor |
Variable Capacitance Diode |
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RENESAS |
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Renesas Technology |
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