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 DataSheet (74.05KB)
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www.DataSheet4U.com Ordering number : ENN7744 SCH2806 SCH2806 Features • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with an N-channel silicon MOSFET (SCH1406) and a Schottky barrier diode (SBS018) contained in one.
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MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications
Composite type with an N-channel silicon MOSFET (SCH1406) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting. [MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive. [SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel T.
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