MRF6S9160HR3 RF Power Field Effect Transistors

MRF6S9160HR3 RF Power Field Effect Transistors

Ferrite Beads, Small 47 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 2.7 pF Chip Capacitor 15 pF Chip Capacitors 12 pF Chip Capacitors 4.3 pF Chip Capacitors 8.2 pF Chip Capacitor 3.9 pF Chip Capacitors 0.6- 4.5 pF Variable Capacitor, Gigatrim 22 pF Chip Capacitor 1 μF, 50 V Tantalum.

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S9160HR3 MRF6S9160HSR3 880 MHz, 35 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S9160HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S9160HSR3 Table 1. Maximum Ratings Rating Drain.