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RD12MVS1

Mitsubishi Electric
Part Number RD12MVS1
Manufacturer Mitsubishi Electric
Title Silicon RF Power MOS FET
Description RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications...
Features High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION For output stage o...
Published Nov 21, 2006
Datasheet PDF File RD12MVS1 PDF File


RD12MVS1
RD12MVS1


Features
High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD12MVS1 is EU RoHS compliant product. RoHS compliant produ...



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