Part Number | RD12MVS1 |
Manufacturer | Mitsubishi Electric |
Title | Silicon RF Power MOS FET |
Description | RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications... |
Features | High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION For output stage o... |
Published | Nov 21, 2006 |
Datasheet | RD12MVS1 PDF File |