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MRF6S23140HR3
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MRF6S23140HR3 RF Power FET

Document Datasheet DataSheet (460.27KB)

MRF6S23140HR3 RF Power FET

Ferrite Beads, Short 5.6 pF 100B Chip Capacitors 0.01 μF, 100 V Chip Capacitors 2.2 μF, 50 V Chip Capacitors 22 μF, 25 V Tantalum Chip Capacitors 47 μF, 16 V Tantalum Chip Capacitors 10 μF, 50 V Chip Capacitors (2220) 330 μF, 63 V Electrolytic Capacitors 10 Ω, 1/8 W Chip Resistor (1206) Part Number .

Features


• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S23140HR3 MRF6S23140HSR3 2300 - 2400 MHz, 28 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF6S23140.

MRF6S23140HR3 MRF6S23140HR3 MRF6S23140HR3
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