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MRF5S21090HSR3
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MRF5S21090HSR3 RF Power Field Effect Transistors

Document Datasheet DataSheet (404.04KB)

MRF5S21090HSR3 RF Power Field Effect Transistors

9.1 pF Chip Capacitor 8.2 pF Chip Capacitor 2.0 pF Chip Capacitor 0.1 µF Chip Capacitors 5.6 pF Chip Capacitor 5.1 pF Chip Capacitor 7.5 pF Chip Capacitor 1.2 pF Chip Capacitor 0.56 µF Chip Capacitors 1000 pF Chip Capacitor 470 µF, 35 V Electrolytic Capacitor 0.4 – 2.5 Variable Capacitors, Gigatrim .

Features

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• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21090HR3 MRF5S21090HSR3 2170 MHz, 19 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S21090HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S21090HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operat.

MRF5S21090HSR3 MRF5S21090HSR3 MRF5S21090HSR3
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