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 DataSheet (149.45KB)
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www.DataSheet4U.com MT3S38T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S38T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =11dB (@f=2GHz) 2 Marking 3 Q5 1 2 TESM JEDEC JEITA Characteristics Colle.
·
· Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =11dB (@f=2GHz)
2
Marking
3
Q5
1 2
TESM JEDEC JEITA
Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 50 25 100 150 −55~150 Unit V V V mA mA mW °C °C
Maximum Ratings (Ta = 25°C)
― ― 2-1B1A
TOSHIBA
Weight:0.0022g (typ.)
1
2002-08-19
www.DataSheet4U.com
MT3S38T
Microwave Characteristics (Ta = 25°C)
Characteristics Transition Frequenc.
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