MT3S05T |
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| Part Number | MT3S05T |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | www.DataSheet4U.com MT3S05T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S05T VHF~UHF Band Low Noise Amplifier Applications · · · Sutable for use in an OSC Low noise figure NF = 1.4dB Exc... |
| Features |
¾ 8.5 ¾
Typ. 4.5 8.5 11.5 1.4
Max ¾ ¾ ¾ 2.2
Unit GHz dB dB
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Symbol ICBO IEBO hFE Cre Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz (Note) Min ¾ ¾ 80 ¾ Typ. ¾ ¾ ¾ 0.9 Max 0.1 1 140 1.25 Unit mA mA ¾ pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
Caution
This device electrostatic sensitivity. Please handle with caution.
2
2002-01-23
www.DataSheet4U.com
MT3S05T
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| Document |
 MT3S05T Data Sheet
PDF 107.35KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Toshiba Semiconductor |
SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
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Toshiba Semiconductor |
SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
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Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL TYPE |
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Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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