MRF1513NT1 |
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| Part Number | MRF1513NT1 |
| Manufacturer | Freescale Semiconductor |
| Description | www.DataSheet4U.com Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and i... |
| Features |
466−03, STYLE 1 PLD−1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain−Source Voltage Gate−Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value −0.5, +40 ± 20 2 31.25 0.25 − 65 to +150 150 Unit Vdc Vdc Adc W W/°C °C °C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 4 Unit °C/W
Table 3. Moisture Sensitivity Level
Test Methodology Per JESD 22−A113, IPC/JEDEC J−STD−020 1. Calculated based on the formu... |
| Datasheet |
 MRF1513NT1 Data Sheet
PDF 467.97KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Motorola |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET |
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Motorola |
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Motorola |
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