IXTH3N120 Power MOSFET

IXTH3N120 Power MOSFET

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maxi.

Features

 International Standard Packages
 High Voltage Package
 Fast Intrinsic Diode
 Avalanche Rated
 Molding Epoxies meet UL 94 V-0 Flammability Classification
 High Blocking Voltage Advantages
 Easy to Mount
 Space Savings
 High Power Density Applications
 High Voltage Power Supplies
 Capacitor Discharge Applications
 Pulse Circuits © 2015 IXYS CORPORATION, All Rights Reserved DS98844F(0515) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching.