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HY5DU56422LTP
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HY5DU56422LTP (HY5DU56x22DTP) 256M DDR SDRAM

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HY5DU56422LTP (HY5DU56x22DTP) 256M DDR SDRAM

and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 /May 2004 www.DataSheet4U.com HY5DU56422D(L)TP HY5DU56822D(L)TP HY5DU561622D(L)TP DESCRIPTION PRELIMINARY The Hynix HY5DU56422D(L.

Features








• VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL align DQ and DQS transition with CK transition DM mask write data-in at the both rising and falling edges of the data strobe








• All addresses an.

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