www.DataSheet4U.com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is i.
EBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE 80 100 120 140 60 80 100 120 5 8 12 0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. PRODUCT DataSheet 4 U .com INFORMATION 1 MAY 1993 - REVISED.
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No. | Part # | Manufacture | Description | Datasheet |
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Bourns Electronic Solutions |
PNP SILICON POWER DARLINGTONS |
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SavantIC |
SILICON POWER TRANSISTOR |
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Comset Semiconductors |
Power Transistor |
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INCHANGE |
PNP Transistor |
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Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
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Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
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INCHANGE |
PNP Transistor |
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SavantIC |
SILICON POWER TRANSISTOR |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS |
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INCHANGE |
NPN Transistor |
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Rohm |
High-Side Switch |
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Rohm |
High-Side Switch |
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Rohm |
High-Side Switch |
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Rohm |
High-Side Switch |
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Rohm |
High-Side Switch |
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