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SSM9918H |
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| Part Number | SSM9918H |
| Manufacturer | Silicon Standard |
| Description | Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S ... |
| Features |
Rev.2.01 6/26/2003
www.SiliconStandard.com
1 of 6
DataSheet 4 U .com
www.DataSheet4U.com
SSM9918H,J
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.1 26 19 1.5 10.5 7.5 83 18 23 500 310 125
Max. Units 14 28 1.2 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=18A VGS=2.5V, ID=9A
VGS(th) gfs IDSS IGSS Qg Qgs... |
| Document |
 SSM9918H Data Sheet
PDF 544.06KB |
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