IRFZ24NSPBF |
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Part Number | IRFZ24NSPBF |
Manufacturer | International Rectifier |
Description | Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processin... |
Features |
g surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24NL) is available for lowprofile applications.
D 2 P ak
T O -26 2
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Opera... |
Datasheet |
IRFZ24NSPBF Data Sheet
PDF 818.83KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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INCHANGE |
N-Channel MOSFET |
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International Rectifier |
Power MOSFET |
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TRANSYS |
Power MOSFET |
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VBsemi |
N-Channel MOSFET |
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NXP |
N-channel enhancement mode TrenchMOS transistor |
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International Rectifier |
Power MOSFET |
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ART CHIP |
Power MOSFET |
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Inchange Semiconductor |
N-Channel MOSFET Transistor |
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International Rectifier |
Power MOSFET |
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TRANSYS |
Power MOSFET |
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