IRHNA593064 RADIATION HARDENED POWER MOSFET

IRHNA593064 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD-94604B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) IRHNA597064 100K Rads (Si) 0.016Ω IRHNA593064 300K Rads (Si) 0.016Ω ID -56A* -56A* IRHNA597064 60V, P-CHANNEL 5 TECHNOLOGY ™ SMD-2 International Rectifier’s.

Features

n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Re.