IRHNA58064 |
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Part Number | IRHNA58064 |
Manufacturer | International Rectifier |
Description | www.DataSheet4U.com PD - 91852G RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57064 100K Rads (Si) IRHNA53064 300K Rads (Si) IRHNA54064 600K ... |
Features |
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Opera... |
Document |
IRHNA58064 Data Sheet
PDF 327.73KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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International Rectifier |
RADIATION HARDENED POWER MOSFET |
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International Rectifier |
N-CHANNEL POWER MOSFET |
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International Rectifier |
RADIATION HARDENED POWER MOSFET |
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International Rectifier |
RADIATION HARDENED POWER MOSFET |
|
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International Rectifier |
RADIATION HARDENED POWER MOSFET |
|
|
|
International Rectifier |
N-CHANNEL POWER MOSFET |
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|
International Rectifier |
RADIATION HARDENED POWER MOSFET |
|
|
|
International Rectifier |
RADIATION HARDENED POWER MOSFET |
|
|
|
International Rectifier |
RADIATION HARDENED POWER MOSFET |
|
|
|
International Rectifier |
N-CHANNEL POWER MOSFET |
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