• Medium power amplifier Features • PC(Collector dissipation)=2W (Ceramic substate of 40×40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766 Ordering Information Type NO. STB1188 Marking B1 : hFE rank, monthly code Package Code SOT-89 Outline.
• PC(Collector dissipation)=2W (Ceramic substate of 40×40×0.8mm used)
• Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
• Complementary pair with STD1766
Ordering Information
Type NO. STB1188 Marking B1 : hFE rank, monthly code Package Code SOT-89
Outline Dimensions
4.0 0.50±0.1 2.5
-0.3 +0.5 -0.3 +0.2
unit : mm
1.00±0.3
3
1.82±0.05
-0.1 +0.2
2
0.52±0.05 0.15 Typ.
4.5
1
0.42±0.05 1.5
-0.1 +0.2
0~0.1
-0.02 +0.04
PIN Connections 1. Base 2. Collector 3. Emitter
KST-8002-001
0.42
1
DataSheet 4 U .com
www.DataSheet4U.com
STB1188
Absolute maximum ratings
Characteristic
Colle.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | STB1132 |
AUK |
PNP Silicon Transistor | |
2 | STB11N65M5 |
INCHANGE |
N-Channel MOSFET | |
3 | STB11N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STB11N65M5-2 |
INCHANGE |
N-Channel MOSFET | |
5 | STB11NB40 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET | |
6 | STB11NB40-1 |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
7 | STB11NK40Z |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
8 | STB11NK50Z |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
9 | STB11NM60 |
INCHANGE |
N-Channel MOSFET | |
10 | STB11NM60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
11 | STB11NM60-1 |
INCHANGE |
N-Channel MOSFET | |
12 | STB11NM60-1 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
13 | STB11NM60A-1 |
ST Microelectronics |
N-Channel MOSFET | |
14 | STB11NM60FD |
ST Microelectronics |
N-Channel MOSFET | |
15 | STB11NM60FD |
INCHANGE |
N-Channel MOSFET |