The µPA1870B is a switching device which can be driven directly by a 2.5 V power source. The µPA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit: mm) 5 1 2, .
a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit: mm)
5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
1.2 MAX. 1.0±0.05 0.25
° 3° +5
–3°
FEATURES
• 2.5 V drive available
• Low on-state resistance RDS(on)1 = 16.0 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 16.5 mΩ TYP. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 20.0 mΩ TYP. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD
1 4
0.1±0.05
0.5 0.6 +0.15
–0.1
0.145 ±0.055
3.15 ±0.15 .
Similar Product
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | UPA1870 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
2 | UPA1871 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
3 | UPA1872 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
4 | UPA1872B |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
5 | UPA1873 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |