MZT2955 (MZT2955 / MZT3055) SILICON PLANAR EPITAXIAL TRANSISTORS

MZT2955 (MZT2955 / MZT3055) SILICON PLANAR EPITAXIAL TRANSISTORS

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Base Current Power Dissipation upto Tc=25ºC Derate above 25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Junction to A.

Features

or Cut Off Current Collector Cut Off Current Emitter Cut Off Current DC Current Gain Collector Emitter Saturation Voltage SYMBOL VCEO ICEX ICBO ICEO IEBO *hFE *VCE (sat) TEST CONDITION IC=1mA, IB=0 VCE=70V, VEB (off)=1.5V VCE=70V, VEB (off)=1.5V, TC=150ºC VCB=70V, IE=0 VCB=70V, IE=0, TC=150ºC VCE=30V, IB=0 VEB=5V, IC=0 IC=4A, VCE=4V IC=10A, VCE=4V IC=4A, IB=400mA IC=10A, IB=3.3A IC=4A, VCE=4V IC=0.5A, VCE=10V, f=500KHz 20 5 MIN 60 MAX 1.0 5.0 1.0 10 0.7 5.0 100 1.1 8.0 1.8 2 V V V MHz UNIT V mA mA mA mA mA mA *VBE(on) Base Emitter On Voltage fT Transition Frequency *Pulse Test : Pulse width <.