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 DataSheet (98.62KB)
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www.DataSheet4U.com Ordering number : ENN7609 ECH8401 N-Channel Silicon MOSFET ECH8401 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2222 [ECH8401] 0.25 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.15 8 5 2.3 2.8 0.65 2.9.
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Package Dimensions
unit : mm 2222
[ECH8401]
0.25
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
0.3
0.15
8
5
2.3
2.8
0.65 2.9 Top View
0.25
1
4
0.9
0.07
Bottom View
1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
DataSheet4U.com
DataShe
Ratings 20 ±12 10 Unit V V .
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | ECH8402 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications |
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| 2 | ECH84 |
MAZDABELVU |
Triode - Heptode |
|
| 3 | ECH84 |
Philips |
Triode - Heptode 1961 |
|
| 4 | ECH84 |
Philips |
Triode - Heptode 1970 |
|
| 5 | ECH8410 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
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| 6 | ECH8410 |
ON Semiconductor |
N-Channel Power MOSFET |
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| 7 | ECH8411 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 8 | ECH8419 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
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| 9 | ECH8419 |
ON Semiconductor |
N-Channel Power MOSFET |
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| 10 | ECH8420 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
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| 11 | ECH8420 |
ON Semiconductor |
MOSFET |
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| 12 | ECH84a |
Lorenz |
Triode - Heptode |
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| 13 | ECH8000 |
TELEFUNKEN |
Triode |
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| 14 | ECH81 |
Marconi |
Triode - Heptode |
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| 15 | ECH81 |
LA RADIOTECHNIQUE |
Triode - Heptode |
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