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2SJ246 |
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| Part Number | 2SJ246 |
| Manufacturer | Hitachi Semiconductor |
| Description | www.DataSheet4U.com 2SJ246 L , 2SJ246 S SILICON P-CHANNEL MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 12 3 • • • • Low on–resistance High speed switching Low drive c... |
| Features |
12 3 12 3
• • • • Low on –resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source. • Suitable for Switching regulator, DC – DC converter 2, 4 1 3 1. Gate 2. Drain 3. Source 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) e DataShe DataSheet4U.com Symbol Ratings Unit ——————————————————————————————————————————— Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body –drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg –30 ... |
| Document |
 2SJ246 Data Sheet
PDF 227.18KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Toshiba |
Field Effect Transistor |
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NEC |
P-Channel MOSFET |
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Hitachi Semiconductor |
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Renesas |
P-Channel MOSFET |
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Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |
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Hitachi Semiconductor |
P-Channel MOSFET |
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Hitachi Semiconductor |
P-Channel MOSFET |
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Toshiba Semiconductor |
P-Channel MOSFET |
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Toshiba Semiconductor |
P-Channel MOSFET |
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NEC |
P-Channel MOSFET |
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