NT5DS128M4BT |
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| Part Number | NT5DS128M4BT |
| Manufacturer | Nanya Techology |
| Description | NT5DS128M4BF, NT5DS128M4BT, NT5DS64M8BF, NT5DS64M8BT, NT5DS32M16BF and NT5DS32M16BT are die B of 512Mb SDRAM devices based using DDR interface. They are all based on Nanya’s 110 nm design process. acc... |
| Features |
CAS Latency and Frequency
CAS Latency 2 2.5 3 Maximum Operating Frequency (MHz) DDR400 DDR333 DDR266B (5T) (6K) (75B) 133 100 166 166 133 200 -
• • • • • • • • • • • • • • DDR 512M bit, die B, based on 110nm design rules • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is centeraligned with data for writes Differential clock inputs (CK and CK) Four internal banks for concurrent operation Data mask (DM) for writ... |
| Document |
 NT5DS128M4BT Data Sheet
PDF 2.36MB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
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Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
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Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
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Nanya Techology |
(NT5DSxxMxAF) 512Mb DDR SDRAM |
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Nanya Techology |
512Mb DDR SDRAM |
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Nanya Techology |
512Mb DDR SDRAM |
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Nanya Techology |
(NT5DSxxMxBx) 256Mb DDR SDRAM |
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Nanya Techology |
(NT5DSxxMxBx) 256Mb DDR SDRAM |
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Nanya Techology |
(NT5DSxxMxBx) 256Mb DDR SDRAM |
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Nanya Techology |
(NT5DSxxMxBx) 256Mb DDR SDRAM |
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