NT5DS16M16BF (NT5DSxxMxBx) 256Mb DDR SDRAM

NT5DS16M16BF (NT5DSxxMxBx) 256Mb DDR SDRAM

The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. tion may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard SDRAMs, the pipelined, mu.

Features

CAS Latency and Frequency CAS Latency 3 2.5 Maximum Operating Frequency (MHz) DDR400B (-5T) 200 166
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• Double data rate architecture: two data transfers per clock cycle
• Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
• DQS is edge-aligned with data for reads and is centeraligned with data for writes
• Differential clock inputs (CK and CK) Four internal banks for concurrent operation Data mask (DM) for write data DLL aligns DQ and DQS transitions with CK transitions Commands entered on each positiv.