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VG26(V)(S)18165C/VG26(V)(S)18165D 1,048,576 x 16 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only powe.
• Single 5V or 3.3V only power supply
• High speed tRAC access time: 50/60ns
• Extended-data-out (EDO) page mode access
• I/O level: TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V)
• 4 refresh modes: - RAS only refresh - CAS - before - RAS refresh - Hidden refresh - Self-refresh
• Refresh interval: - RAS only refresh, CAS - before - RAS refresh and hidden refresh: 1024 cycles in 16 ms - Self-refresh: 1024 cycles
• JEDEC standard pinout: 44-pin 400mil SOJ and 50(44)-pin 400mil TSOPII
DataSheet4U.com
DataShee
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Document:1G5-0179 Rev.2 Page 1
DataSheet 4 U .com
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Vanguard Microelectronics Limited |
CMOS DRAM |
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Vanguard International Semiconductor |
CMOS DRAM |
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Vanguard International Semiconductor |
CMOS Dynamic RAM |
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Vanguard International Semiconductor |
CMOS DRAM |
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Vanguard Microelectronics Limited |
CMOS DRAM |
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Vanguard Microelectronics Limited |
CMOS DRAM |
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Vanguard International Semiconductor |
CMOS DRAM |
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Vanguard International Semiconductor |
CMOS DRAM |
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Vanguard International Semiconductor |
CMOS DRAM |
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Vanguard Microelectronics Limited |
CMOS DRAM |
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Vanguard Microelectronics Limited |
CMOS DRAM |
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Vanguard International Semiconductor |
CMOS DRAM |
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Vanguard Microelectronics Limited |
CMOS DRAM |
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Vanguard Microelectronics Limited |
CMOS DRAM |
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Vanguard Microelectronics Limited |
CMOS DRAM |
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