VG2617400D |
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Part Number | VG2617400D |
Manufacturer | Vanguard International Semiconductor |
Description | VG26(V)(S)17400D 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed t... |
Features |
• Single 5V ( ± 10 %) or 3.3V ( ± 10 %) only power supply • High speed tRAC access time : 50/60 ns • Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.) • Fast Page Mode access • I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V) • 2048 refresh cycles in 32 ms (Std) or 128ms (S - version) • 4 refresh mode : - RAS only refresh - CAS-before-RAS refresh - Hidden refresh - Self - refresh (S - version) ee DataSh DataSheet4U.com DataSheet4U.com Document:1G5-0126 ... |
Document |
VG2617400D Data Sheet
PDF 496.98KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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Vanguard International Semiconductor |
CMOS DRAM |
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Vanguard Microelectronics Limited |
CMOS DRAM |
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Vanguard Microelectronics Limited |
CMOS DRAM |
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Vanguard International Semiconductor |
CMOS DRAM |
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Vanguard Microelectronics Limited |
CMOS DRAM |
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Vanguard Microelectronics Limited |
CMOS DRAM |
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Vanguard Microelectronics Limited |
CMOS DRAM |
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Vanguard International Semiconductor |
CMOS DRAM |
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Vanguard International Semiconductor |
CMOS Dynamic RAM |
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Vanguard International Semiconductor |
CMOS DRAM |
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