VG26S17405 CMOS DRAM

VG26S17405 CMOS DRAM

VG26(V)(S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply. Low voltag.

Features

• Single 5V( ± 10 %) or 3.3V( ± 10 %) only power supply
• High speed tRAC acess time: 50/60ns
• Low power dissipation - Active wode : 5V version 660/605 mW (Mas) 3.3V version 432/396 mW (Mas) - Standby mode: 5V version 1.375 mW (Mas) 3.3V version 0.54 mW (Mas)
• Extended - data - out(EDO) page mode access
• I/O level: TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V) DataSheet4U.com
• 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
• 4 refresh modesh: - RAS only refresh - CAS - before - RAS refresh - Hidden refresh - Self-refresh(S-version) DataShe e DataSheet4U.com Document.