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2SK3760 |
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| Part Number | 2SK3760 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | www.DataSheet4U.com 2SK3760 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) 2SK3760 unit•F‚•‚• Switching Regulator Applications 3.84•} 0 .2 3.84•}0.2 10.5 10.5max max 4.7ma... |
| Features |
alanche energy (Note 3) Channel temperature Storage temperature range
1. 2. 3.
Gate Drain(HEAT SINK) Source
DataSheet4U.com
6 150 -55~150
3.5
DataShee
JEDEC JEITA TOSHIBA
TO-220AB SC-46
• Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.08 83.3 Unit °C/W °C/W Weight : 2.0g(typ.) 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 0.9 mH, IAR = 3.5 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limite... |
| Document |
 2SK3760 Data Sheet
PDF 266.46KB |
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