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2SA2154 Silicon PNP Transistor

Document Datasheet DataSheet (140.11KB)

2SA2154 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 2SA2154 General-Purpose Amplifier Applications • High voltage and high current : VCEO = −50 V, IC = −100 mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complemen.

Features

e, etc.) may cause this product to decrease in the TOSHIBA 2-1E1A reliability significantly even if the operating conditions (i.e. Weight: 0.6 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Collector cutof.

2SA2154 2SA2154 2SA2154
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