2SA2140 Silicon PNP Transistor

2SA2140 Silicon PNP Transistor

www.DataSheet4U.com Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm 3.0±0.5 For power amplification For TV VM circuit ■ Features • Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package which can be installed to the h.

Features

• Satisfactory linearity of forward current transfer ratio hFE
• High transition frequency (fT)
• Full-pack package which can be installed to the heat sink with one screw. 15.0±0.5 9.9±0.3 4.6±0.2 2.9±0.2 φ 3.2±0.1 13.7±0.2 4.2±0.2 Solder Dip 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15
■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO V.