CY62167DV18 16M (1024K x 16) Static RAM

CY62167DV18 16M (1024K x 16) Static RAM

of read and write modes. • Automatic power-down when deselected • CMOS for optimum speed/power • Packages offered in a 48-ball FBGA Functional Description[1] The CY62167DV18 is a high-performance CMOS static RAM organized as 1024K words by 16 bits. This device features advanced circuit design to p.

Features

• Very high speed: 55 ns and 70 ns
• Voltage range: 1.65V to 1.95V
• Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 15 mA @ f = fMAX
• Ultra-low standby power
• Easy memory expansion with CE1, CE2 and OE features toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1) HIGH or Chip Enabl.