H2N6520 |
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| Part Number | H2N6520 |
| Manufacturer | Hi-Sincerity Mocroelectronics |
| Description | The H2N6520 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • The H2N652... |
| Features |
• High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • The H2N6520 is complementary to H2N6517 TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .... -55 ~ +150 °C Junction Temperature ... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .... |
| Datasheet |
 H2N6520 Data Sheet
PDF 47.70KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
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HAOHAI |
N-Channel MOSFET |
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HAOHAI |
N-Channel MOSFET |
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HAOHAI |
N-Channel MOSFET |
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HAOHAI |
N-Channel MOSFET |
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Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
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Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
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Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
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Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
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Hi-Sincerity Mocroelectronics |
NPN Transistor |
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Hi-Sincerity Mocroelectronics |
NPN Transistor |
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Hi-Sincerity Mocroelectronics |
NPN SILICON TRANSISTOR |
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