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NP34N055IHE |
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| Part Number | NP34N055IHE |
| Manufacturer | NEC |
| Description | These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 1... |
| Features |
• Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 19 m Ω MAX. (VGS = 10 V, I D = 17 A) • Low Ciss : Ciss = 1600 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 (TO-251) 55 ±20 ±34 V V A A W W A mJ °C °C (TO-252) VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg DataShee DataSheet4U.com ±136 1.2 88 34 / 27 / 10 11 / 72 / 100 175 –55 to + 175 Total Power Dissipation (TA = 25 °C) Total Power Dissipation (TC = 25 °C) Single Avalanche Cur... |
| Document |
 NP34N055IHE Data Sheet
PDF 260.05KB |
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