IRG4PH30KD Datasheet

IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR

www.DataSheet4U.com PD- 91579A IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parame.

Features

• High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Tighter parameter distribution and higher efficiency than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ. = 3.10V @VGE = 15V, IC = 10A n-ch an nel Benefits
• Latest generation 4 IGBT's offer highest power density motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs. Minimized rec.