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P6NA60FI |
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| Part Number | P6NA60FI |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
| Features |
P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP6NA60FI 600 600 ± 30 6.5 4.3 26 125 1 -65 to 150 150 3.9 2.6 26 45 0.36 2000
Unit
V V V A A A W W/o C V
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C C
( •) Pulse width limited by safe operating area November 1996 1/10 www.DataSheet4U.com STP6NA60/FI THERMAL DATA... |
| Document |
 P6NA60FI Data Sheet
PDF 235.07KB |
| Distributor | Stock | Price | Buy |
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