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K9WAG08U1M

Part Number	K9WAG08U1M
Manufacturer	Samsung semiconductor
Description	(K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
Features	• Voltage Supply - 2.70V ~ 3.60V • Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8b...
Published	Feb 21, 2006
Datasheet	K9WAG08U1M PDF File

Features

• Voltage Supply - 2.70V ~ 3.60V 
• Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit 
• Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte 
• Page Read Operation - Page Size ...

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