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SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . High Collector Current : = 30A . High DC Current Gain : hFE =1000(Min.),(vCE =5V, I C =20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm MAXIMUM RATINGS (Ta=2.
. High Collector Current : = 30A . High DC Current Gain : hFE =1000(Min.),(vCE =5V, I C =20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL vCB0 VCEO VEBO ic IB ^tg_ RATING 80 80 UNIT 30 150 150 °C -65 ~ 150 °C 1. BASE 2. EMITTER COLLECTOR (CASE) TOSHIBA TO— TC-3 , TB— 2— 21 Al A Mounting kit No. AC73 Weight : 12.
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