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STD150NH02L |
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| Part Number | STD150NH02L |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The STD150NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This novel 0.6µ process utilizes also unique metallization techniques that couple to a "bondless" as... |
| Features |
s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES
ABSOLUTE MAXIMUM RATINGS
Symbol Vspike(1) VDS VDGR VGS ID ID IDM(2) Ptot EAS (3) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 150 95 600 125 0.83 900 -55 to 175 Unit V V V V A A A W ... |
| Document |
 STD150NH02L Data Sheet
PDF 494.48KB |
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