STD17N06 N-CHANNEL POWER MOSFET

STD17N06 N-CHANNEL POWER MOSFET

STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD17N05 STD17N06 s s s s s s s s V DSS 50 V 60 V R DS( on) < 0.085 Ω < 0.085 Ω ID 17 A 17 A s s TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARG.

Features

S = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value STD17N06 60 60 ± 20 17 12 68 55 0.37 -65 to 175 175 Unit 50 50 V V V A A A W W/o C o o C C (
•) Pulse width limited by safe operating area December 1996 1/10 STD17N05/STD17N06 THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Max.