IRGPC20F |
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| Part Number | IRGPC20F |
| Manufacturer | IRF |
| Description | Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requi... |
| Features |
• Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.8V @VGE = 15V, I C = 9.0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum ... |
| Datasheet |
 IRGPC20F Data Sheet
PDF 252.29KB |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
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