MRF10150 Datasheet (PDF), Stock and Price, Motorola TRANSISTORS, Distributor

MRF10150 MICROWAVE POWER TRANSISTORS

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10150/D Microwave Pulse Power Transistor . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watt.

Features

e Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 65 65 3.5 14 700 4.0
– 65 to + 200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.25 Unit °C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measur.

No.	Part #	Manufacture	Description
1	MRF10150	Tyco	MICROWAVE POWER TRANSISTORS
2	MRF1015Mx	Motorola	MICROWAVE POWER TRANSISTORS
3	MRF10120	Tyco	MICROWAVE POWER TRANSISTORS
4	MRF10120	Motorola	MICROWAVE POWER TRANSISTORS
5	MRF101AN	NXP	RF Power LDMOS Transistors
6	MRF101BN	NXP	RF Power LDMOS Transistors
7	MRF10005	Tyco	The RF Line Microwave Power Transistor
8	MRF10005	Motorola	MICROWAVE POWER TRANSISTOR
9	MRF1000MB	Tyco	Microwave Pulse Power Transistors
10	MRF1001A	Microsemi	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
11	MRF1002	Motorola	MICROWAVE POWER TRANSISTOR
12	MRF10031	Motorola	MICROWAVE POWER TRANSISTOR
13	MRF10031	MACOM	Microwave Power Silicon NPN Transistor
14	MRF1004MA	ASI	NPN SILICON RF POWER TRANSISTOR
15	MRF1004MB	Tyco	MICROWAVE POWER TRANSISTORS

MRF10150 MICROWAVE POWER TRANSISTORS

MRF10150 MICROWAVE POWER TRANSISTORS

Features

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