IRHM7C50SE |
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| Part Number | IRHM7C50SE |
| Manufacturer | IRF |
| Description | Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1252B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR ® IRHM2C50SE IRHM7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE)... |
| Features |
n n n n n n n n n n n n n
Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets
Absolute Maximum Ratings
Parameter
I D @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25°C Max. Power Dis... |
| Document |
 IRHM7C50SE Data Sheet
PDF 134.38KB |
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RADIATION HARDENED POWER MOSFET THRU-HOLE |
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(IRHM7064 / IRHM8064) TRANSISTOR N-CHANNEL |
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IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
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International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
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IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
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International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
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International Rectifier |
Radiation Hardened Power MOSFET |
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International Rectifier |
(IRHM7230 / IRHM8230) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
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IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
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