IRFSL4710 Power MOSFET

IRFSL4710 Power MOSFET

PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See .

Features

Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Notes  through ‡ Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ are on page 11 Typ.
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  –
  – 0.50
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  –
  –
  –
  –
  – Max. 0.74
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  – 62 40 Units °C/W www.irf.com 1 3/16/01 IRFB/IRFS/IRFL4710 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward L.