IRFSL59N10D |
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Part Number | IRFSL59N10D |
Manufacturer | IRF |
Description | PD - 93890 SMPS MOSFET IRFB59N10D IRFS59N10D IRFSL59N10D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 100V RDS(on) max 0.025Ω ID 59A Benefits l Low Gate-to-Drain Cha... |
Features |
ns °C
Typical SMPS Topologies
l l
Half-bridge and Full-bridge DC-DC Converters Full-bridge Inverters
Notes
through are on page 11
www.irf.com
1
4/17/00
IRFB/IRFS/IRFSL59N10D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 – – – – – – 3.0 – – – – – – – – – – – – Typ. – – – 0.11 – – – – – – – – – – – – – – – – – – Max. Unit... |
Document |
IRFSL59N10D Data Sheet
PDF 138.99KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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INCHANGE |
N-Channel MOSFET |
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International Rectifier |
HEXFET Power MOSFET |
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IRF |
Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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International Rectifier |
Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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International Rectifier |
Digital Audio MOSFET |
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International Rectifier |
Digital Audio MOSFET |
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IRF |
HEXFET Power MOSFET |
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Vishay |
Power MOSFET |
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