K4T51083QC Datasheet (PDF), Stock and Price, Samsung SDRAM, Distributor

K4T51083QC 512Mb C-die DDR2 SDRAM

2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 29 Rev. 1.2 May 2005 512Mb C-die DDR2 SDRAM 0. Ordering Information Org. 128Mx4 64Mx8 32Mx16 DDR2-667 4-4-41 K4T51043QC-ZC(L)D6 K4T51083QC-ZC(L)D6 K4T51163QC-ZC(L)D6 DDR2-667 5-5-51 K4T51043QC-Z.

Features

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 4-4-4 4 12 12 51 DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin
• 4 independent internal banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode.

No.	Part #	Manufacture	Description
1	K4T51083QB-GCD5	Samsung semiconductor	512Mb B-die DDR2 SDRAM
2	K4T51083QB-ZCD5	Samsung semiconductor	512Mb B-die DDR2 SDRAM
3	K4T51083QE	Samsung semiconductor	512Mb E-die DDR2 SDRAM Specification
4	K4T51083QG	Samsung	512Mb G-die DDR2 SDRAM
5	K4T51083QI	Samsung	512Mb I-die DDR2 SDRAM
6	K4T51083QJ	Samsung	512Mb J-die DDR2 SDRAM
7	K4T51083QN	Samsung	512Mb N-die DDR2 SDRAM
8	K4T51083QQ	Samsung	512Mb Q-die DDR2 SDRAM
9	K4T51043Q	Samsung	512Mb B-die DDR2 SDRAM
10	K4T51043QB-GCD5	Samsung semiconductor	512Mb B-die DDR2 SDRAM
11	K4T51043QB-ZCD5	Samsung semiconductor	512Mb B-die DDR2 SDRAM
12	K4T51043QE	Samsung semiconductor	512Mb E-die DDR2 SDRAM Specification
13	K4T51043QG	Samsung	512Mb G-die DDR2 SDRAM
14	K4T51043QI	Samsung	512Mb I-die DDR2 SDRAM
15	K4T51043QJ	Samsung	512Mb J-die DDR2 SDRAM

K4T51083QC 512Mb C-die DDR2 SDRAM

K4T51083QC 512Mb C-die DDR2 SDRAM

Features

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