K4T56043QF Datasheet (PDF), Stock and Price, Samsung SDRAM, Distributor

K4T56043QF 256Mb F-die DDR2 SDRAM

2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 27 Rev. 1.5 Feb. 2005 256Mb F-die DDR2 SDRAM 0. Ordering Information Organization 64Mx4 64Mx4 32Mx8 32Mx8 DDR2-667 5-5-5 K4T56083QF-GCE6 K4T56083QF-ZCE6 DDR2-533 4-4-4 K4T56043QF-GCD5 K4T56043QF.

Features

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Sin.

No.	Part #	Manufacture	Description
1	K4T56083QF	Samsung	256Mb F-die DDR2 SDRAM
2	K4T56163QN	Samsung	256Mb N-die DDR2 SDRAM
3	K4T51043Q	Samsung	512Mb B-die DDR2 SDRAM
4	K4T51043QB-GCD5	Samsung semiconductor	512Mb B-die DDR2 SDRAM
5	K4T51043QB-ZCD5	Samsung semiconductor	512Mb B-die DDR2 SDRAM
6	K4T51043QE	Samsung semiconductor	512Mb E-die DDR2 SDRAM Specification
7	K4T51043QG	Samsung	512Mb G-die DDR2 SDRAM
8	K4T51043QI	Samsung	512Mb I-die DDR2 SDRAM
9	K4T51043QJ	Samsung	512Mb J-die DDR2 SDRAM
10	K4T51083QB-GCD5	Samsung semiconductor	512Mb B-die DDR2 SDRAM
11	K4T51083QB-ZCD5	Samsung semiconductor	512Mb B-die DDR2 SDRAM
12	K4T51083QC	Samsung	512Mb C-die DDR2 SDRAM
13	K4T51083QE	Samsung semiconductor	512Mb E-die DDR2 SDRAM Specification
14	K4T51083QG	Samsung	512Mb G-die DDR2 SDRAM
15	K4T51083QI	Samsung	512Mb I-die DDR2 SDRAM

K4T56043QF 256Mb F-die DDR2 SDRAM

K4T56043QF 256Mb F-die DDR2 SDRAM

Features

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