2SC2173 Silicon NPN Transistor

2SC2173 Silicon NPN Transistor

: SILICON NPN EPITAXIAL PLANAR TYPE V A UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =25W(Min.) (f=470MHz, VCC=12.6V, Pi=10W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V CC=12.6V, Pi=10W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHAR.

Features

. Output Power : P =25W(Min.) (f=470MHz, VCC=12.6V, Pi=10W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V CC=12.6V, Pi=10W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range v CB0 v CE0 v EB0 ic Tstg ELECTRICAL CHARACTERISTICS (Ta=25 °C) 35 3.5 50 175 -65 -175 JEDEC 1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR TOSHIBA 2 — 10 01 Mounting Kit No, AC57 W.