2SB554 |
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| Part Number | 2SB554 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS, FEATURES • High Power Dissipation • High Breakdown Voltage : P c = 150W VcEO = -180V • Complementary tc/2SD424. • Re... |
| Features |
• High Power Dissipation • High Breakdown Voltage : P c = 150W VcEO = -180V • Complementary tc/2SD424. • Recommended for 100W High-Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (T a?=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL v CBO v CF0 Emitter-Base Voltage Collector Current VE750 ic Emitter Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range If PC T-i Tstg RATING -180 -180 -5 -15 15 150 UNIT V V V A A W 15 °C -65 %150 °C 1. BASE Z. EMITTER COLLECTOR (CASE) TO-3 TOSHIBA TC-3, T... |
| Document |
 2SB554 Data Sheet
PDF 89.48KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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SavantIC |
SILICON POWER TRANSISTOR |
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INCHANGE |
PNP Transistor |
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SavantIC |
SILICON POWER TRANSISTOR |
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INCHANGE |
PNP Transistor |
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Toshiba |
SILICON PNP TRANSISTOR |
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SavantIC |
SILICON POWER TRANSISTOR |
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INCHANGE |
PNP Transistor |
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Toshiba |
SILICON PNP TRANSISTOR |
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SavantIC |
SILICON POWER TRANSISTOR |
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INCHANGE |
PNP Transistor |
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