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STP12NK30Z |
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| Part Number | STP12NK30Z |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken ... |
| Features |
OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
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STP12NK30Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGS... |
| Document |
 STP12NK30Z Data Sheet
PDF 283.40KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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STMicroelectronics |
N-CHANNEL MOSFET |
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STMicroelectronics |
N-CHANNEL MOSFET |
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STMicroelectronics |
N-CHANNEL Power MOS MOSFET |
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STMicroelectronics |
N-channel Power MOSFET |
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STMicroelectronics |
N-channel Power MOSFET |
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ST Microelectronics |
N-Channel Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
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ST Microelectronics |
N-CHANNEL Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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