SI4558DY Datasheet

SI4558DY N- and P-Channel 30-V (D-S) MOSFET

Si4558DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.040 @ VGS = 10 V 0.060 @ VGS = 4.5 V ID (A) "6 "4.8 "6 "4.4 P-Channel –30 0.040 @ VGS = –10 V 0.070 @ VGS = –4.5 V S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D D D D G2 D G1 .

Features

or P- Channel 52 Unit _C/W 2-1 Si4558DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Z Zero Gate G Voltage V l Drain D i Current C IDSS VDS =
  –30 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS =
  –24 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 10 V b O S On-State Drain D i Current C Symbol Test Condition Min Typa Max Unit N-Ch P-Ch 1.0
  –1.0 "100 V nA N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch.